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PD-91866B
SMPS MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptible Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN1001)
IRFBA22N50A
HEXFET(R) Power MOSFET
VDSS
500V
RDS(on) max
0.23
ID
24A
Super-220TM (TO-273AA)
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force
Max.
24 15 96 340 2.7 30 3.4 -55 to + 150 300 (1.6mm from case ) 20
Units
A W W/C V V/ns C N
Applicable Off Line SMPS Topologies:
l l
Full Bridge Converters Power Factor Correction Boost
Notes
through
are on page 8
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IRFBA22N50A
Static @ TJ = 25C (unless otherwise specified)
V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- 2.0 --- --- --- --- Typ. --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, I D = 250A 0.23 VGS = 10V, ID = 13.8A 4.0 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. 12 --- --- --- --- --- --- --- --- 20 --- 66 --- 46 --- 44 --- 3397 --- 505 --- 17 --- 4884 --- 134 --- 154 Max. Units Conditions --- S VDS = 50V, ID = 13.8A 114 ID = 23A 28 nC VDS = 400V 47 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 23A ns --- RG = 4.3 --- RD = 10.6,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
1180 24 34
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.37 --- 58
Units
C/W
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 23 --- --- showing the A G integral reverse --- --- 92 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 23A, VGS = 0V --- 490 735 ns TJ = 25C, IF = 23A --- 6.4 9.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFBA22N50A
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
4.5V
4.5V
0.1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
I D = 23A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 150 C
2.0
10
1.5
TJ = 25 C
1.0
0.5
1 4.0
V DS = 50V 20s PULSE WIDTH 8.0 9.0 5.0 6.0 7.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFBA22N50A
7000
VGS , Gate-to-Source Voltage (V)
6000
V G S = 0V, f = 1M Hz C is s = Cg s + C g d , Cd s SHOR TED C rs s = C g d C o s s = Cd s + C g d
20
ID = 23A
16
VDS = 400V VDS = 250V VDS = 100V
C, Capacitance (pF)
5000
4000
12
C iss
3000
8
C oss
2000
4
1000
C rss
A
1 10 100 1000
0
0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
80 100 60 120
V D S , D ra in-to -Source V olta ge (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
TJ = 150 C
10
I D , Drain Current (A)
100
10us
TJ = 25 C
100us
10
1ms
1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2 1.4 1.6
1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms
1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFBA22N50A
25
VDS VGS
RD
20
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
15
10V
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFBA22N50A
1 5V
2500
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
D R IV E R
2000
ID 10.7A 15A BOTTOM 24A TOP
RG
20V tp
D .U .T
IA S
+ V - DD
1500
A
0 .0 1
1000
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
500
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
V D S a v , A valanc he V oltage (V)
640
630
Charge
620
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
610
50K 12V .2F .3F
600
D.U.T. VGS
3mA
+ V - DS
590 0 4 8 12 16 20 24
A
I a v , A v alanc he C urre nt (A )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
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IRFBA22N50A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFET
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IRFBA22N50A
Super-220TM ( TO-273AA ) Package Outline
11.00 [.433] 10.00 [.394] 5.00 [.196] 4.00 [.158] B 9.00 [. 8.00 [. 0.25 [
4
15.00 [.590] 14.00 [.552]
13.50 [. 12.50 [.
1
2
3
14.50 [.570] 13.00 [.512]
3X
1.30 [.051] 0.90 [.036] BA
4X
1.00 [.039] 0.70 [.028] 3.00 [.118] 2.50 [.099]
0.25 [.010]
MOSFET
IGBT
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 3.4mH
RG = 25, I AS = 24A. (See Figure 12)
ISD 23A, di/dt 123A/s, VDD V(BR)DSS,
TJ 150C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00
8
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